SOI & Si Wafer

Processed Si-Wafers on a dicing tape

NQW is the specialist in Silicon Wafers and SOI Wafer Services for different Specifications and applications

Si – Wafer Grades /Requirements
  • Diameters: 2″ up to 300mm
  • Grades: Prime, Litography,
  • Particle, Furnance,
  • Test, Mechanical
SOI – Technology Notes:
  • Diameter: 6″ up to 8″
  • Technologies: Simox, BESOI,
  • Simbond, Smart-Cut, RF-SOI Product
  • SOI Layer: Thk. 220 nm +/- 0.01 um
  • BOX Layer:Thk. < 3.0 um +/- 0.15um
  • BOX Layer:Thk. < 400 nm+/- 5.0 nm
EPI – Technology Notes:
  • Diameter: 4″, 5″, 6″ up to 8″
  • Technologies: Simox, BESOI,
  • BiCMOS / Bipolar buried layer epitaxy
    CMOS epitaxy
    Epitaxy on SOI Substrates
  • Thick Epitaxy up to 150µm,
  • Thin Epitaxy < 1.0µm
  • Resistivity: 0.008 – 1.5k ohm.cm
SiC – Wafer:
  • Diameter: 4″ up to 6″
  • Grade: Production, Research, Dummy
  • 4H-SiC N-Type Wafer
  • Thickness: 350µm or 500µm
  • Micropipe Density: 1/cm² up to 10/cm²
  • Resistivity: 0.015 – 0.028 ohm.cm

Do you need further information or a quotation?

Please feel free to call use by phone +49 (0) 9101 / 90 220 – 200 or simply use our request form.